SIHP690 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
POWER MOSFET, N CHANNEL, 600 V, 6.4 A, 0.6 OHM, TO-220AB, THROUGH HOLE
| Part | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5 V | -55 °C | 150 °C | TO-220AB | 700 mOhm | 62.5 W | 12 nC | MOSFET (Metal Oxide) | 600 V | N-Channel | Through Hole | 30 V | 347 pF | 10 V | 6.4 A | TO-220-3 |