Discrete Semiconductor Products

SI1025X-T1-E3

Obsolete

MOSFET 2P-CH 60V 0.19A SC89

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 60V 0.19A SC89

Technical Specifications

Parameters and characteristics for this part

Specification	SI1025X-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	190 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.7 nC
Input Capacitance (Ciss) (Max) @ Vds	23 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	250 mW
Rds On (Max) @ Id, Vgs [Max]	4 Ohm
Supplier Device Package	SC-89 (SOT-563F)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Power - Max [Max]	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology
Vishay General Semiconductor - Diodes Division SI1025X-T1-GE3	SC-89 (SOT-563F)	SOT-563 SOT-666	60 V	4 Ohm	190 mA	3 V	23 pF	1.7 nC	2 P-Channel	250 mW	Logic Level Gate	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI1025X-T1-E3	SC-89 (SOT-563F)	SOT-563 SOT-666	60 V	4 Ohm	190 mA	3 V	23 pF	1.7 nC	2 P-Channel	250 mW	Logic Level Gate	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 60V 190mA 250mW Surface Mount SC-89 (SOT-563F)

Technical documentation and resources

No documents available