SI1025 Series

Catalog

MOSFET 2P-CH 60V 0.19A SC89

Part	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Power - Max [Max]	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology
Vishay General Semiconductor - Diodes Division SI1025X-T1-GE3	SC-89 (SOT-563F)	SOT-563 SOT-666	60 V	4 Ohm	190 mA	3 V	23 pF	1.7 nC	2 P-Channel	250 mW	Logic Level Gate	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI1025X-T1-E3	SC-89 (SOT-563F)	SOT-563 SOT-666	60 V	4 Ohm	190 mA	3 V	23 pF	1.7 nC	2 P-Channel	250 mW	Logic Level Gate	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)