Specification	BC549CTA

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	420
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

BC549 Series

NPN Epitaxial Silicon Transistor

Part	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Package / Case	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature
ON Semiconductor BC549B	300 MHz	100 mA	Through Hole	600 mV	200	15 nA	NPN	TO-226-3 TO-92-3	TO-92-3	500 mW	30 V	150 °C
ON Semiconductor BC549CTA	300 MHz	100 mA	Through Hole	600 mV	420	15 nA	NPN	TO-226-3 TO-92-3	TO-92-3	500 mW	30 V	150 °C
ON Semiconductor BC549BTFR	300 MHz	100 mA	Through Hole	600 mV	200	15 nA	NPN	TO-226-3 TO-92-3	TO-92-3	500 mW	30 V	150 °C
ON Semiconductor BC549TF	300 MHz	100 mA	Through Hole	600 mV	110	15 nA	NPN	TO-226-3 TO-92-3	TO-92-3	500 mW	30 V	150 °C
ON Semiconductor BC549C_J35Z	300 MHz	100 mA	Through Hole	600 mV	420	15 nA	NPN	TO-226-3 TO-92-3	TO-92-3	500 mW	30 V	150 °C
ON Semiconductor BC549CTF	300 MHz	100 mA	Through Hole	600 mV	420	15 nA	NPN	TO-226-3 TO-92-3	TO-92-3	500 mW	30 V	150 °C
ON Semiconductor BC549BTAR	300 MHz	100 mA	Through Hole	600 mV	200	15 nA	NPN	TO-226-3 TO-92-3	TO-92-3	500 mW	30 V	150 °C
ON Semiconductor BC549	300 MHz	100 mA	Through Hole	600 mV	110	15 nA	NPN	TO-226-3 TO-92-3	TO-92-3	500 mW	30 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources