Catalog
NPN Epitaxial Silicon Transistor
Key Features
• High Voltage VCEO=65V
• Low Noise: BC549,BC550
• Complement to BC556...BC560Switching and Amplifier
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Frequency - Transition | Current - Collector (Ic) (Max) [Max] | Mounting Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector Cutoff (Max) [Max] | Transistor Type | Package / Case | Supplier Device Package | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 300 MHz | 100 mA | Through Hole | 600 mV | 200 | 15 nA | NPN | TO-226-3 TO-92-3 | TO-92-3 | 500 mW | 30 V | 150 °C |
ON Semiconductor | 300 MHz | 100 mA | Through Hole | 600 mV | 420 | 15 nA | NPN | TO-226-3 TO-92-3 | TO-92-3 | 500 mW | 30 V | 150 °C |
ON Semiconductor | 300 MHz | 100 mA | Through Hole | 600 mV | 200 | 15 nA | NPN | TO-226-3 TO-92-3 | TO-92-3 | 500 mW | 30 V | 150 °C |
ON Semiconductor | 300 MHz | 100 mA | Through Hole | 600 mV | 110 | 15 nA | NPN | TO-226-3 TO-92-3 | TO-92-3 | 500 mW | 30 V | 150 °C |
ON Semiconductor | 300 MHz | 100 mA | Through Hole | 600 mV | 420 | 15 nA | NPN | TO-226-3 TO-92-3 | TO-92-3 | 500 mW | 30 V | 150 °C |
ON Semiconductor | 300 MHz | 100 mA | Through Hole | 600 mV | 420 | 15 nA | NPN | TO-226-3 TO-92-3 | TO-92-3 | 500 mW | 30 V | 150 °C |
ON Semiconductor | 300 MHz | 100 mA | Through Hole | 600 mV | 200 | 15 nA | NPN | TO-226-3 TO-92-3 | TO-92-3 | 500 mW | 30 V | 150 °C |
ON Semiconductor | 300 MHz | 100 mA | Through Hole | 600 mV | 110 | 15 nA | NPN | TO-226-3 TO-92-3 | TO-92-3 | 500 mW | 30 V | 150 °C |