Specification	FDB8870

Current - Continuous Drain (Id) @ 25°C	23 A, 160 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	132 nC
Input Capacitance (Ciss) (Max) @ Vds	5200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDB8870_F085 Series

N-Channel PowerTrench® MOSFET, 30V, 160A, 3.9mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Grade	Qualification
ON Semiconductor FDB8870	132 nC	20 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	23 A 160 A	TO-263 (D2PAK)	3.9 mOhm	4.5 V 10 V	30 V	N-Channel	2.5 V	MOSFET (Metal Oxide)	5200 pF	Surface Mount
ON Semiconductor FDB8870	132 nC	20 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	23 A 160 A	TO-263 (D2PAK)	3.9 mOhm	4.5 V 10 V	30 V	N-Channel	2.5 V	MOSFET (Metal Oxide)	5200 pF	Surface Mount
ON Semiconductor FDB8870-F085	132 nC	20 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	23 A 160 A	TO-263 (D2PAK)	3.9 mOhm	4.5 V 10 V	30 V	N-Channel	2.5 V	MOSFET (Metal Oxide)	5200 pF	Surface Mount	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	270	$ 1.11
		270	$ 1.11

Description

General part information

FDB8870_F085 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.