FDB8870_F085 Series

N-Channel PowerTrench® MOSFET, 30V, 160A, 3.9mΩ

Catalog

N-Channel PowerTrench® MOSFET, 30V, 160A, 3.9mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Grade	Qualification
ON Semiconductor FDB8870	132 nC	20 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	23 A 160 A	TO-263 (D2PAK)	3.9 mOhm	4.5 V 10 V	30 V	N-Channel	2.5 V	MOSFET (Metal Oxide)	5200 pF	Surface Mount
ON Semiconductor FDB8870	132 nC	20 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	23 A 160 A	TO-263 (D2PAK)	3.9 mOhm	4.5 V 10 V	30 V	N-Channel	2.5 V	MOSFET (Metal Oxide)	5200 pF	Surface Mount
ON Semiconductor FDB8870-F085	132 nC	20 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	23 A 160 A	TO-263 (D2PAK)	3.9 mOhm	4.5 V 10 V	30 V	N-Channel	2.5 V	MOSFET (Metal Oxide)	5200 pF	Surface Mount	Automotive	AEC-Q101

Catalog

N-Channel PowerTrench® MOSFET, 30V, 160A, 3.9mΩ

Key Features

• rDS(ON)= 3.9mΩ, VGS= 10V, ID= 35A

• rDS(ON)= 4.4mΩ, VGS= 4.5V, ID= 35A

• High performance trench technology for extremely lowrDS(ON)

• Low gate charge

• High power and current handling capability

• Qualified to AEC Q101

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.