Discrete Semiconductor Products

SI5406DC-T1-E3

Obsolete

MOSFET N-CH 12V 6.9A 1206-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 12V 6.9A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5406DC-T1-E3

Current - Continuous Drain (Id) @ 25°C	6.9 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	600 mV

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI5406CDC-T1-GE3	1 V	6 A	1100 pF	1206-8 ChipFET™	12 V	Surface Mount	20 mOhm	8 V	MOSFET (Metal Oxide)	32 nC	-55 °C	150 °C	2.3 W 5.7 W	N-Channel	1.8 V 4.5 V
Vishay General Semiconductor - Diodes Division SI5406DC-T1-E3	600 mV	6.9 A		1206-8 ChipFET™	12 V	Surface Mount	20 mOhm	8 V	MOSFET (Metal Oxide)		-55 °C	150 °C	1.3 W	N-Channel	2.5 V 4.5 V	20 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 12 V 6.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™

Technical documentation and resources