SI5406 Series

Catalog

MOSFET N-CH 12V 6A 1206-8

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI5406CDC-T1-GE3	1 V	6 A	1100 pF	1206-8 ChipFET™	12 V	Surface Mount	20 mOhm	8 V	MOSFET (Metal Oxide)	32 nC	-55 °C	150 °C	2.3 W 5.7 W	N-Channel	1.8 V 4.5 V
Vishay General Semiconductor - Diodes Division SI5406DC-T1-E3	600 mV	6.9 A		1206-8 ChipFET™	12 V	Surface Mount	20 mOhm	8 V	MOSFET (Metal Oxide)		-55 °C	150 °C	1.3 W	N-Channel	2.5 V 4.5 V	20 nC