Discrete Semiconductor Products

PMPB23XNE,115

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MOSFET N-CH 20V 7A DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET N-CH 20V 7A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB23XNE,115

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1136 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.7 W, 12.5 W
Rds On (Max) @ Id, Vgs [Max]	22 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Freescale Semiconductor - NXP PMPB23XNEZ	1.8 V 4.5 V	20 V	900 mV	N-Channel	1136 pF	1.7 W	6-UDFN Exposed Pad	Surface Mount	7 A	MOSFET (Metal Oxide)	DFN2020MD-6	-55 °C	150 °C	12 V	17 nC	22 mOhm
Freescale Semiconductor - NXP PMPB23XNE,115	1.8 V 4.5 V	20 V	900 mV	N-Channel	1136 pF	1.7 W 12.5 W	6-UDFN Exposed Pad	Surface Mount	7 A	MOSFET (Metal Oxide)	DFN2020MD-6	-55 °C	150 °C	12 V	17 nC	22 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 7A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources