Discrete Semiconductor Products
FDMC7672
ActiveON Semiconductor
N-CHANNEL POWER TRENCH® MOSFET 30V, 16.9A, 5.7MΩ
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
FDMC7672
ActiveON Semiconductor
N-CHANNEL POWER TRENCH® MOSFET 30V, 16.9A, 5.7MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC7672 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A, 16.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3890 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 33 W, 2.3 W |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 660 | $ 0.46 | |
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.52 | |
| 6000 | $ 0.47 | |||
| 12000 | $ 0.43 | |||
| 18000 | $ 0.41 | |||
| 30000 | $ 0.40 | |||
| ON Semiconductor | N/A | 1 | $ 0.36 | |
Description
General part information
FDMC7672 Series
This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Documents
Technical documentation and resources