FDMC7672 Series

N-Channel Power Trench® MOSFET 30V, 16.9A, 5.7mΩ

Catalog

N-Channel Power Trench® MOSFET 30V, 16.9A, 5.7mΩ

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	FET Type	Mounting Type	Vgs (Max)
ON Semiconductor FDMC7672	MOSFET (Metal Oxide)	4.5 V 10 V	3 V	-55 °C	150 °C	16.9 A 20 A	2.3 W 33 W	3890 pF	30 V	5.7 mOhm	57 nC	8-PowerWDFN	8-MLP (3.3x3.3)	N-Channel	Surface Mount	20 V

Catalog

N-Channel Power Trench® MOSFET 30V, 16.9A, 5.7mΩ

Key Features

• Max rDS(on)= 5.7 mΩ at VGS= 10 V, ID= 16.9 A

• Max rDS(on)= 7.0 mΩ at VGS= 4.5 V, ID= 15.0 A

• High performance technology for extremely low rDS(on)

• Termination is Lead-free and RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.