Specification	NXH240B120H3Q1PG

Configuration	Triple, Dual
Current - Collector (Ic) (Max) [Max]	68 A
Current - Collector Cutoff (Max) [Max]	400 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	18.151 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	158 W
Supplier Device Package	32-PIM (71x37.4)
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

NXH240B120H3Q1 Series

Power Integrated Module (PIM) 3-channel 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC diode

Part	Current - Collector (Ic) (Max) [Max]	IGBT Type	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Input Capacitance (Cies) @ Vce	Package / Case	NTC Thermistor	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Input	Configuration	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type
ON Semiconductor NXH240B120H3Q1PG	68 A	Trench Field Stop	2 V	1200 V	18.151 nF	Module		400 µA	32-PIM (71x37.4)	Standard	Dual Triple	158 W	150 °C	-40 °C	Chassis Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 90.50
		10	$ 72.81
Newark	Each	10	$ 81.55
		25	$ 80.39
		50	$ 79.22
		100	$ 74.56
ON Semiconductor	N/A	1	$ 66.99

Description

General part information

NXH240B120H3Q1 Series

The NXH240B120H3Q1PG is a 3-channel 1200 V IGBT + SiC Boost module. Each channel consists of a fast switching 80 A IGBT, a 20 A SiC diode, a bypass diode and an IGBT protection diode. The module contains an NTC thermistor.