
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | MJ11032 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Cutoff (Max) | 2 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 C |
| Operating Temperature [Min] | -55 °C |
| Power - Max [Max] | 300 W |
| Supplier Device Package | TO-204 |
| Supplier Device Package | TO-3 |
| Vce Saturation (Max) @ Ib, Ic | 3.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 120 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJ110 Series
Bipolar (BJT) Transistor NPN - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
Documents
Technical documentation and resources