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TO-3 Pkg
Discrete Semiconductor Products

MJ11016

Obsolete
ON Semiconductor

TRANS NPN DARL 120V 30A TO204

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TO-3 Pkg
Discrete Semiconductor Products

MJ11016

Obsolete
ON Semiconductor

TRANS NPN DARL 120V 30A TO204

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMJ11016
Current - Collector (Ic) (Max) [Max]30 A
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000 hFE
Frequency - Transition4 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-3, TO-204AA
Power - Max [Max]200 W
Supplier Device PackageTO-204
Supplier Device PackageTO-3
Vce Saturation (Max) @ Ib, Ic [Max]4 V
Voltage - Collector Emitter Breakdown (Max) [Max]120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MJ110 Series

Bipolar (BJT) Transistor NPN - Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)

Documents

Technical documentation and resources