Discrete Semiconductor Products
FDS8813NZ
LTBON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 18.5 A, 30 V, 0.0038 OHM, 10 V, 1.8 V ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
FDS8813NZ
LTBON Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 18.5 A, 30 V, 0.0038 OHM, 10 V, 1.8 V ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDS8813NZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4145 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FDS8813NZ Series
This N–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Documents
Technical documentation and resources