TC6320TG-G
ActiveMOSFET, N AND P CHANNEL, 200V 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES
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TC6320TG-G
ActiveMOSFET, N AND P CHANNEL, 200V 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | TC6320TG-G |
|---|---|
| Configuration | N and P-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF, 125 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rds On (Max) @ Id, Vgs | 7 Ohm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.81 | |
| 25 | $ 1.50 | |||
| 100 | $ 1.36 | |||
| Digi-Reel® | 1 | $ 1.81 | ||
| 25 | $ 1.50 | |||
| 100 | $ 1.36 | |||
| Tape & Reel (TR) | 3300 | $ 1.36 | ||
| Microchip Direct | T/R | 1 | $ 1.81 | |
| 25 | $ 1.50 | |||
| 100 | $ 1.36 | |||
| 1000 | $ 1.32 | |||
| 5000 | $ 1.31 | |||
| Newark | Each (Supplied on Full Reel) | 3300 | $ 1.40 | |
Description
General part information
TC6320 Series
TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated GATE-to-SOURCE resistors and GATE-to-SOURCE Zener diode clamps which are desired for high voltage pulser applications. It is a complementary, high-speed, high voltage, GATE-clamped N- and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
