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SOT1220
Discrete Semiconductor Products

BUK4D50-30PX

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Nexperia USA Inc.

28 V, P-CHANNEL TRENCH MOSFET

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SOT1220
Discrete Semiconductor Products

BUK4D50-30PX

Active
Nexperia USA Inc.

28 V, P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK4D50-30PX
Current - Continuous Drain (Id) @ 25°C13 A, 5 A
Drain to Source Voltage (Vdss)28 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]21 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1254 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)2.1 W, 15 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.15
Tape & Reel (TR) 3000$ 0.12
6000$ 0.11
15000$ 0.10
30000$ 0.09
75000$ 0.09

Description

General part information

BUK4D50-30P Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.