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28 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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28 V, P-channel Trench MOSFET
28 V, P-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Mounting Type | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Qualification | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Grade | Technology | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1 V | 1.8 V | 4.5 V | Surface Mount | 2.1 W 15 W | 175 °C | -55 °C | 21 nC | DFN2020MD-6 | AEC-Q101 | 28 V | 50 mOhm | P-Channel | 12 V | 1254 pF | Automotive | MOSFET (Metal Oxide) | 5 A 13 A | 6-UDFN Exposed Pad |