NTC020N120SC1

Obsolete

ON Semiconductor

SILICON CARBIDE (SIC) MOSFET - ELITESIC, 20 MOHM, 1200 V, M1, DIE

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Discrete Semiconductor Products

NTC020N120SC1

Obsolete

ON Semiconductor

SILICON CARBIDE (SIC) MOSFET - ELITESIC, 20 MOHM, 1200 V, M1, DIE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTC020N120SC1

Current - Continuous Drain (Id) @ 25°C	103 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	203 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	Die
Power Dissipation (Max) [Max]	535 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	Die
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-15 V
Vgs(th) (Max) @ Id	4.3 V

NTC020N120SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, Die

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package
ON Semiconductor NTC020N120SC1	4.3 V	203 nC	535 W	103 A	1200 V	N-Channel	-15 V	25 V	Die	-55 °C	175 ░C	28 mOhm	Surface Mount	2890 pF	Die

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTC020N120SC1 Series

Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.

Documents

Technical documentation and resources