NTC020N120SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, Die

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, Die

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package
ON Semiconductor NTC020N120SC1	4.3 V	203 nC	535 W	103 A	1200 V	N-Channel	-15 V	25 V	Die	-55 °C	175 ░C	28 mOhm	Surface Mount	2890 pF	Die

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, Die

Key Features

• 1200 V

• High Speed Switching with Low Capacitance

• 100% UIL Tested

Description

Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.