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38 VQFN
Integrated Circuits (ICs)

LMG3612REQR

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Texas Instruments

650-V 120-MΩ GAN FET WITH INTEGRATED DRIVER AND PROTECTION

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38 VQFN
Integrated Circuits (ICs)

LMG3612REQR

Active
Texas Instruments

650-V 120-MΩ GAN FET WITH INTEGRATED DRIVER AND PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationLMG3612REQR
Current - Output (Max) [Max]7.7 A
Fault ProtectionUVLO
FeaturesSlew Rate Controlled
InterfaceLogic
Mounting TypeSurface Mount
Number of Outputs1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Output ConfigurationLow Side
Output TypeN-Channel
Package / Case38-VFQFN Exposed Pad
Ratio - Input:Output [custom]1:1
Rds On (Typ)120 mOhm
Switch TypeGeneral Purpose
Voltage - Supply (Vcc/Vdd) [Max]26 V
Voltage - Supply (Vcc/Vdd) [Min]10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.81
10$ 7.06
25$ 6.73
100$ 5.84
250$ 5.58
500$ 5.09
1000$ 4.43
Digi-Reel® 1$ 7.81
10$ 7.06
25$ 6.73
100$ 5.84
250$ 5.58
500$ 5.09
1000$ 4.43
Tape & Reel (TR) 2000$ 4.27
Texas InstrumentsLARGE T&R 1$ 5.98
100$ 4.88
250$ 3.83
1000$ 3.25

Description

General part information

LMG3612 Series

The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3612 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.