LMG3612 Series
650-V 120-mΩ GaN FET with integrated driver and protection
Manufacturer: Texas Instruments
Catalog
650-V 120-mΩ GaN FET with integrated driver and protection
Key Features
• 650-V 120-mΩ GaN power FETIntegrated gate driver with low propagation delays and adjustable turn-on slew-rate controlOvertemperature protection with FLT pin reportingAUX quiescent current: 55 µAMaximum supply and input logic pin voltage: 26 V8 mm × 5.3 mm QFN package with thermal pad650-V 120-mΩ GaN power FETIntegrated gate driver with low propagation delays and adjustable turn-on slew-rate controlOvertemperature protection with FLT pin reportingAUX quiescent current: 55 µAMaximum supply and input logic pin voltage: 26 V8 mm × 5.3 mm QFN package with thermal pad
Description
AI
The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control.
The LMG3612 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.
The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control.
The LMG3612 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.
