IXFN110N60P3
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 90 A, 600 V, 0.056 OHM, 10 V, 5 V
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IXFN110N60P3
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 90 A, 600 V, 0.056 OHM, 10 V, 5 V
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN110N60P3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 90 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 245 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 18000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 1500 W |
| Rds On (Max) @ Id, Vgs | 56 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
IXFN110N60P3 Series
DiscMSFT NChHiPerFETPolar3 SOT-227B(mini
| Part | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Technology | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Littelfuse/Commercial Vehicle Products | 10 V | -55 °C | 150 °C | 1170 W | 17000 pF | 5.5 V | N-Channel | 30 V | 425 nC | 110 A | Chassis Mount | SOT-227B | MOSFET (Metal Oxide) | SOT-227-4 miniBLOC | 850 V | 33 mOhm | |
Littelfuse/Commercial Vehicle Products | 10 V | -55 °C | 150 °C | 18000 pF | 5 V | N-Channel | 30 V | 245 nC | 90 A | Chassis Mount | SOT-227B | MOSFET (Metal Oxide) | SOT-227-4 miniBLOC | 600 V | 56 mOhm | 1500 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 41.86 | |
| 10 | $ 37.30 | |||
| 100 | $ 32.74 | |||
Description
General part information
IXFN110N60P3 Series
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings
Documents
Technical documentation and resources