Specification	IXFN110N85X

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	850 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	425 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	17000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	1170 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFN110N60P3 Series

DiscMSFT NChHiPerFETPolar3 SOT-227B(mini

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Technology	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXFN110N85X	10 V	-55 °C	150 °C	1170 W	17000 pF	5.5 V	N-Channel	30 V	425 nC	110 A	Chassis Mount	SOT-227B	MOSFET (Metal Oxide)	SOT-227-4 miniBLOC	850 V	33 mOhm
Littelfuse/Commercial Vehicle Products IXFN110N60P3	10 V	-55 °C	150 °C		18000 pF	5 V	N-Channel	30 V	245 nC	90 A	Chassis Mount	SOT-227B	MOSFET (Metal Oxide)	SOT-227-4 miniBLOC	600 V	56 mOhm	1500 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 72.79
		10	$ 65.97
		100	$ 59.14
Newark	Each	100	$ 59.01

Description

General part information

IXFN110N60P3 Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

IXFN110N85X

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IXFN110N85X

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Technical Specifications

IXFN110N60P3 Series

Pricing

Description

IXFN110N60P3 Series

Documents

Handling and Mounting Littelfuse miniBLOC - SOT227B

Datasheet

UR_QQQX2_E72873_20171208

Datasheet

IXFN110N60P3 Series