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Technical Specifications
Parameters and characteristics for this part
| Specification | JANS2N5416U4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 |
| Grade | Military |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 1 W |
| Qualification | MIL-PRF-19500/485 |
| Supplier Device Package | U4 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
JANTXV2N5416-Transistor Series
This family of 2N5415 and 2N5416 epitaxial planar PNP transistors are military qualified up to a JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) and low profile surfacemount U4, U4 and UA packaging.
Documents
Technical documentation and resources
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