Specification	DMN2040UVT-7

Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	667 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

DMN2040UVT Series

20V N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Configuration	Package / Case	Package / Case [custom]	Package / Case [custom]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Grade	Package / Case [y]	Package / Case [x]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMN2040LTS-13	5.2 nC	Surface Mount	8-TSSOP	1.2 V	2 N-Channel (Dual) Common Drain	8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	-55 °C	150 °C	AEC-Q101	6.7 A	20 V	890 mW	26 mOhm	Automotive
Diodes Inc DMN2040LSD-13		Surface Mount	8-SOP	1.2 V	2 N-Channel (Dual)	8-SOIC			MOSFET (Metal Oxide)	-55 °C	150 °C		7 A	20 V	2 W	26 mOhm		3.9 mm	0.154 in	Logic Level Gate	562 pF
Diodes Inc DMN2040UVT-7		Surface Mount		1.5 V		SOT-23-6 Thin TSOT-23-6			MOSFET (Metal Oxide)	-55 °C	150 °C		6.7 A	20 V		24 mOhm						1.2 W	2.5 V 4.5 V	7.5 nC	N-Channel	8 V	667 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

20V N-Channel Enhancement Mode MOSFET

Technical documentation and resources