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20V N-Channel Enhancement Mode MOSFET
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20V N-Channel Enhancement Mode MOSFET
20V N-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Configuration | Package / Case | Package / Case [custom] | Package / Case [custom] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Qualification | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Grade | Package / Case [y] | Package / Case [x] | FET Feature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 5.2 nC | Surface Mount | 8-TSSOP | 1.2 V | 2 N-Channel (Dual) Common Drain | 8-TSSOP | 0.173 " | 4.4 mm | MOSFET (Metal Oxide) | -55 °C | 150 °C | AEC-Q101 | 6.7 A | 20 V | 890 mW | 26 mOhm | Automotive | ||||||||||
 Diodes Inc | Surface Mount | 8-SOP | 1.2 V | 2 N-Channel (Dual) | 8-SOIC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 7 A | 20 V | 2 W | 26 mOhm | 3.9 mm | 0.154 in | Logic Level Gate | 562 pF | |||||||||||
 Diodes Inc | Surface Mount | 1.5 V | SOT-23-6 Thin TSOT-23-6 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 6.7 A | 20 V | 24 mOhm | 1.2 W | 2.5 V 4.5 V | 7.5 nC | N-Channel | 8 V | 667 pF |