Discrete Semiconductor Products
STB6NK90ZT4
ActiveSTMicroelectronics
N-CHANNEL 900 V, 1.56 OHM TYP., 5.8 A SUPERMESH POWER MOSFET IN A D2PAK PACKAGE
Discrete Semiconductor Products
STB6NK90ZT4
ActiveSTMicroelectronics
N-CHANNEL 900 V, 1.56 OHM TYP., 5.8 A SUPERMESH POWER MOSFET IN A D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB6NK90ZT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.8 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 60.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) [Max] | 140 W |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB6NK90ZT4 Series
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources