Specification	FAM65CR51XZ2

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	64 A
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs [Max]	123 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4864 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-SSIP Exposed Pad, Formed Leads
Power - Max [Max]	463 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	51 mOhm
Supplier Device Package	APMCD-B16
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5 V

FAM65CR51XZ Series

Power Integrated Module (PIM) Boost Converter Stage for Multiphase and Semi-Bridgeless PFC

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Qualification	Power - Max [Max]	Package / Case
ON Semiconductor FAM65CR51XZ1	650 V	APMCA-A16	MOSFET (Metal Oxide)	-55 °C	150 °C	Automotive	51 mOhm	4864 pF	Through Hole	5 V	64 A	123 nC	2 N-Channel	AEC-Q101	463 W	12-SSIP Exposed Pad Formed Leads
ON Semiconductor FAM65CR51XZ2	650 V	APMCD-B16	MOSFET (Metal Oxide)	-55 °C	150 °C	Automotive	51 mOhm	4864 pF	Through Hole	5 V	64 A	123 nC	2 N-Channel	AEC-Q101	463 W	12-SSIP Exposed Pad Formed Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	72	$ 33.33
Newark	Each	50	$ 26.99
		100	$ 25.44
ON Semiconductor	N/A	1	$ 25.88

Description

General part information

FAM65CR51XZ Series

Automotive Power Module in Totem Pole configuration using 51mOhm SuperFET3 MOSFET and Stealth(TM) Diodes for usage in PFC stages of OBC systems.This high power version uses AlN substrate material for extreme thermal performance.