Discrete Semiconductor Products
FDS86267P
ActiveON Semiconductor
P-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET -150V, -2.2A, 255MΩ
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Discrete Semiconductor Products
FDS86267P
ActiveON Semiconductor
P-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET -150V, -2.2A, 255MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDS86267P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.2 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 1 W |
| Rds On (Max) @ Id, Vgs [Max] | 255 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.62 | |
| 10 | $ 1.33 | |||
| 100 | $ 1.03 | |||
| 500 | $ 0.87 | |||
| 1000 | $ 0.71 | |||
| Digi-Reel® | 1 | $ 1.62 | ||
| 10 | $ 1.33 | |||
| 100 | $ 1.03 | |||
| 500 | $ 0.87 | |||
| 1000 | $ 0.71 | |||
| Tape & Reel (TR) | 2500 | $ 0.67 | ||
| 5000 | $ 0.64 | |||
| 12500 | $ 0.61 | |||
| Newark | Each (Supplied on Full Reel) | 1 | $ 0.59 | |
| ON Semiconductor | N/A | 1 | $ 0.56 | |
Description
General part information
FDS86267P Series
This P-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior switching performance.
Documents
Technical documentation and resources