Littelfuse power semiconductor silicon carbide LSIC2SD065DxxA

Discrete Semiconductor Products

LSIC2SD065D20A

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LITTELFUSE

650V/20A SIC SBD?TO263-2LAEC-Q101/ TR ROHS COMPLIANT: YES

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Discrete Semiconductor Products

LSIC2SD065D20A

Active

LITTELFUSE

650V/20A SIC SBD?TO263-2LAEC-Q101/ TR ROHS COMPLIANT: YES

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LSIC2SD065D20A

Capacitance @ Vr, F	960 pF
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole, Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2, D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220AC, TO-263-2L
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

LSIC2SD065D20A Series

650V/20A SiC SBD?TO263-2LAEC-Q101

Part	Supplier Device Package	Mounting Type	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Grade	Qualification	Reverse Recovery Time (trr)
LITTELFUSE LSIC2SD065D20A	TO-220AC TO-263-2L	Surface Mount Through Hole	D2PAK (2 Leads + Tab) TO-220-2 TO-263-3 TO-263AB	500 mA	1.8 V	960 pF	SiC (Silicon Carbide) Schottky	650 V	175 ░C	-55 °C	100 µA	Automotive	AEC-Q101	0 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 11.35	1m+
		10	$ 9.73
		100	$ 8.11
	N/A	612	$ 8.59	1m+
	Tape & Reel (TR)	800	$ 5.84	1m+
Newark	Each (Supplied on Full Reel)	800	$ 6.36	1m+
		1600	$ 5.99
		2400	$ 5.71

Description

General part information

LSIC2SD065D20A Series

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

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Technical documentation and resources