Discrete Semiconductor Products

PBRN123ET,215

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TRANS PREBIAS NPN 40V TO236AB

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Discrete Semiconductor Products

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TRANS PREBIAS NPN 40V TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PBRN123ET,215

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	280
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Supplier Device Package	TO-236AB
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic [Max]	1.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

Part	Transistor Type	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic [Max]	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Package / Case
Freescale Semiconductor - NXP PBRN123YT,215	NPN - Pre-Biased	Surface Mount	TO-236AB	40 V	500	600 mA	250 mW	2.2 kOhm	1.15 V	10 kOhms	500 nA	SC-59 SOT-23-3 TO-236-3
Freescale Semiconductor - NXP PBRN123ET,215	NPN - Pre-Biased	Surface Mount	TO-236AB	40 V	280	600 mA	250 mW	2.2 kOhm	1.15 V	2.2 kOhms	500 nA	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources