Discrete Semiconductor Products

TK5Q65W,S1Q

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MOSFET N-CH 650V 5.2A IPAK

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Discrete Semiconductor Products

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MOSFET N-CH 650V 5.2A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK5Q65W,S1Q

Current - Continuous Drain (Id) @ 25°C	5.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	1.22 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TK5Q65W,S1Q	10 V	IPAK	10.5 nC	150 °C	30 V	60 W	3.5 V	380 pF	Through Hole	650 V	N-Channel	TO-251-3 Stub Leads IPAK	5.2 A	MOSFET (Metal Oxide)	1.22 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 5.2A (Ta) 60W (Tc) Through Hole IPAK

Technical documentation and resources