TK5Q65 Series

Catalog

MOSFET N-CH 650V 5.2A IPAK

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TK5Q65W,S1Q	10 V	IPAK	10.5 nC	150 °C	30 V	60 W	3.5 V	380 pF	Through Hole	650 V	N-Channel	TO-251-3 Stub Leads IPAK	5.2 A	MOSFET (Metal Oxide)	1.22 Ohm