Discrete Semiconductor Products

FDS6990AS

Obsolete

ON Semiconductor

DUAL N-CHANNEL POWERTRENCH® SYNCFET™, 30V, 7.5A, 22MΩ

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Search across all available documentation for this part.

DocumentsPackage Drawing-751EB-SOIC8 Datasheet

Discrete Semiconductor Products

FDS6990AS

Obsolete

ON Semiconductor

DUAL N-CHANNEL POWERTRENCH® SYNCFET™, 30V, 7.5A, 22MΩ

Deep-Dive with AI

DocumentsPackage Drawing-751EB-SOIC8 Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS6990AS

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs [Max]	22 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDS6990AS Series

Dual N-Channel Logic Level PowerTrench® MOSFET 30V, 7.5A, 18mΩ

Part	Drain to Source Voltage (Vdss)	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Configuration	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor FDS6990AS	30 V	900 mW	22 mOhm	3 V	MOSFET (Metal Oxide)	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	Surface Mount	550 pF	2 N-Channel (Dual)	Logic Level Gate	14 nC	7.5 A	8-SOIC
ON Semiconductor FDS6990A	30 V	900 mW		3 V	MOSFET (Metal Oxide)	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	Surface Mount	1235 pF	2 N-Channel (Dual)	Logic Level Gate		7.5 A	8-SOIC	17 nC	18 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS6990AS Series

The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. Each MOSFET includes integrated Schottky diodes using a monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.