FDS6990AS Series

Dual N-Channel Logic Level PowerTrench® MOSFET 30V, 7.5A, 18mΩ

Catalog

Dual N-Channel Logic Level PowerTrench® MOSFET 30V, 7.5A, 18mΩ

Part	Drain to Source Voltage (Vdss)	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Configuration	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor FDS6990AS	30 V	900 mW	22 mOhm	3 V	MOSFET (Metal Oxide)	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	Surface Mount	550 pF	2 N-Channel (Dual)	Logic Level Gate	14 nC	7.5 A	8-SOIC
ON Semiconductor FDS6990A	30 V	900 mW		3 V	MOSFET (Metal Oxide)	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	Surface Mount	1235 pF	2 N-Channel (Dual)	Logic Level Gate		7.5 A	8-SOIC	17 nC	18 mOhm

Catalog

Dual N-Channel Logic Level PowerTrench® MOSFET 30V, 7.5A, 18mΩ

Key Features

• 7.5A, 30VRDS(ON)= 22 mΩ @ VGS= 10VRDS(ON)= 28 mΩ @ VGS= 4.5V

• Includes SyncFET Schottky body diode

• Low gate charge (10nC typical)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. Each MOSFET includes integrated Schottky diodes using a monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.