Specification	FDMS7578

Current - Continuous Drain (Id) @ 25°C	17 A, 28 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	33 W, 2.5 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS7578 Series

N-Channel Power Trench® MOSFET 25V, 60A, 5.8mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor FDMS7578	1625 pF	N-Channel	2.5 W 33 W	25 V	4.5 V 10 V	5.8 mOhm	8-PQFN (5x6)	8-PowerTDFN	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	17 A 28 A	25 nC	3 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS7578 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.