FDMS7578 Series

N-Channel Power Trench® MOSFET 25V, 60A, 5.8mΩ

Catalog

N-Channel Power Trench® MOSFET 25V, 60A, 5.8mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor FDMS7578	1625 pF	N-Channel	2.5 W 33 W	25 V	4.5 V 10 V	5.8 mOhm	8-PQFN (5x6)	8-PowerTDFN	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	17 A 28 A	25 nC	3 V	Surface Mount

Catalog

N-Channel Power Trench® MOSFET 25V, 60A, 5.8mΩ

Key Features

• Max rDS(on)= 5.8 mΩ at VGS= 10 V, ID= 17 A

• Max rDS(on)= 8 mΩ at VGS= 4.5 V, ID= 14 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.