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TO-236AB
Discrete Semiconductor Products

PMV20XNEAR

Active
Freescale Semiconductor - NXP

SMALL SIGNAL LOW RDSON AUTOMOTIVE TRANS MOSFET N-CH 20V 6.3A 3-PIN TO-236AB T/R

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TO-236AB
Discrete Semiconductor Products

PMV20XNEAR

Active
Freescale Semiconductor - NXP

SMALL SIGNAL LOW RDSON AUTOMOTIVE TRANS MOSFET N-CH 20V 6.3A 3-PIN TO-236AB T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV20XNEAR
Current - Continuous Drain (Id) @ 25°C6.3 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds930 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)460 mW
Power Dissipation (Max)6.94 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]20 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.42
10$ 0.33
100$ 0.20
500$ 0.18
1000$ 0.12
Digi-Reel® 1$ 0.42
10$ 0.33
100$ 0.20
500$ 0.18
1000$ 0.12
Tape & Reel (TR) 3000$ 0.11
6000$ 0.11
9000$ 0.10
30000$ 0.10
75000$ 0.09

Description

General part information

PMV20XNEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.