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20 V, N-channel Trench MOSFET
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Grade | Qualification | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Vgs(th) (Max) @ Id | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | MOSFET (Metal Oxide) | 12 V | 6.3 A | Automotive | AEC-Q101 | 15 nC | 2.5 V 4.5 V | TO-236AB | -55 °C | 150 °C | 20 mOhm | SC-59 SOT-23-3 TO-236-3 | 1.25 V | N-Channel | 20 V | Surface Mount | 460 mW | 6.94 W | 930 pF |