Specification	FDB0105N407L

Current - Continuous Drain (Id) @ 25°C	460 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	291 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	23100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	300 W, 3.8 W
Rds On (Max) @ Id, Vgs	0.8 mOhm
Supplier Device Package	TO-263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDB0105N407L Series

N-Channel PowerTrench® MOSFET 40 V 460A, 0.8mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max)	Technology	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type
ON Semiconductor FDB0105N407L	-55 °C	175 ░C	460 A	291 nC	D2PAK TO-263-7	3.8 W 300 W	MOSFET (Metal Oxide)	20 V	TO-263-7	4 V	40 V	N-Channel	6 V 10 V	0.8 mOhm	23100 pF	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDB0105N407L Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.