FDB0105N407L Series

N-Channel PowerTrench® MOSFET 40 V 460A, 0.8mΩ

Catalog

N-Channel PowerTrench® MOSFET 40 V 460A, 0.8mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max)	Technology	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type
ON Semiconductor FDB0105N407L	-55 °C	175 ░C	460 A	291 nC	D2PAK TO-263-7	3.8 W 300 W	MOSFET (Metal Oxide)	20 V	TO-263-7	4 V	40 V	N-Channel	6 V 10 V	0.8 mOhm	23100 pF	Surface Mount

Catalog

N-Channel PowerTrench® MOSFET 40 V 460A, 0.8mΩ

Key Features

• Max rDS(on)= 0.8 mΩ at VGS= 10 V, ID= 50 A

• Max rDS(on)= 1.1 mΩ at VGS= 6 V, ID= 42 A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.