Discrete Semiconductor Products

IRLD014PBF

LTB

MOSFET N-CH 60V 1.7A 4DIP

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 1.7A 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRLD014PBF

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.4 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	200 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type
Vishay General Semiconductor - Diodes Division IRLD014	MOSFET (Metal Oxide)	400 pF	2 V	8.4 nC	4 V 5 V	1.3 W	Through Hole	1.7 A	4-DIP (0.300" 7.62mm)	-55 °C	175 ░C	200 mOhm	10 V	60 V	N-Channel
Vishay General Semiconductor - Diodes Division IRLD014PBF	MOSFET (Metal Oxide)	400 pF	2 V	8.4 nC	4 V 5 V	1.3 W	Through Hole	1.7 A	4-DIP (0.300" 7.62mm)	-55 °C	175 ░C	200 mOhm	10 V	60 V	N-Channel

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General part information

N-Channel 60 V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Technical documentation and resources