IRLD014 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 60V 1.7A 4DIP
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 400 pF | 2 V | 8.4 nC | 4 V 5 V | 1.3 W | Through Hole | 1.7 A | 4-DIP (0.300" 7.62mm) | -55 °C | 175 ░C | 200 mOhm | 10 V | 60 V | N-Channel |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 400 pF | 2 V | 8.4 nC | 4 V 5 V | 1.3 W | Through Hole | 1.7 A | 4-DIP (0.300" 7.62mm) | -55 °C | 175 ░C | 200 mOhm | 10 V | 60 V | N-Channel |