Discrete Semiconductor Products

STF2N62K3

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STMicroelectronics

N-CHANNEL 620 V, 3 OHM, 2.2 A, TO-220FP SUPERMESH3(TM) POWER MOSFET

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DocumentsDatasheet AN2842 +15

Discrete Semiconductor Products

STF2N62K3

Active

STMicroelectronics

N-CHANNEL 620 V, 3 OHM, 2.2 A, TO-220FP SUPERMESH3(TM) POWER MOSFET

Deep-Dive with AI

DocumentsDatasheet AN2842 +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF2N62K3

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	3.6 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STF2N62K3 Series

N-channel 620 V, 3 Ohm, 2.2 A, TO-220FP SuperMESH3(TM) Power MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
STMicroelectronics STF2N62K3	340 pF	Through Hole	MOSFET (Metal Oxide)	10 V	20 W	30 V	150 °C	4.5 V	2.2 A	TO-220FP	TO-220-3 Full Pack	N-Channel	620 V	3.6 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 1.22
		100	$ 1.00
		250	$ 0.98
		500	$ 0.85
		1250	$ 0.72
		2500	$ 0.68
		5000	$ 0.66

Description

General part information

STF2N62K3 Series

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.