Discrete Semiconductor Products

2N2222A

Obsolete

BJT TO92 40V NPN 0.625W 150C

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Discrete Semiconductor Products

Obsolete

BJT TO92 40V NPN 0.625W 150C

Technical Specifications

Parameters and characteristics for this part

Specification	2N2222A

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max [Max]	500 mW
Supplier Device Package	TO-18
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	Frequency - Transition
STMicroelectronics 2N2222A	500 mW	TO-18-3 Metal Can TO-206AA	100 hFE	600 mA	1 V	NPN	175 °C	40 V	10 nA	Through Hole	TO-18	300 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 500 mW Through Hole TO-18

Technical documentation and resources