ONET8551TYS4
Active11.3-GBPS LIMITING TRANSIMPEDANCE AMPLIFIER WITH RSSI
Deep-Dive with AI
Search across all available documentation for this part.
ONET8551TYS4
Active11.3-GBPS LIMITING TRANSIMPEDANCE AMPLIFIER WITH RSSI
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ONET8551TYS4 |
|---|---|
| -3db Bandwidth | 9 GHz |
| Amplifier Type | Transimpedance |
| Current - Supply | 28 mA |
| Mounting Type | Surface Mount |
| Number of Circuits | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Die |
| Supplier Device Package | Wafer |
| Voltage - Supply Span (Max) [Max] | 3.63 V |
| Voltage - Supply Span (Min) [Min] | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 335 | $ 2.80 | |
| Texas Instruments | TUBE | 1 | $ 3.02 | |
| 100 | $ 2.65 | |||
| 250 | $ 1.86 | |||
| 1000 | $ 1.50 | |||
Description
General part information
ONET8551T Series
The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI.
The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can.
The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.
Documents
Technical documentation and resources
