ONET8551T Series

11.3-Gbps limiting transimpedance amplifier with RSSI

Catalog

11.3-Gbps limiting transimpedance amplifier with RSSI

Part	Amplifier Type	-3db Bandwidth	Package / Case	Voltage - Supply Span (Max) [Max]	Current - Supply	Number of Circuits	Mounting Type	Supplier Device Package	Voltage - Supply Span (Min) [Min]	Operating Temperature [Max]	Operating Temperature [Min]
Texas Instruments ONET8551TY	Transimpedance	9 GHz	Die	3.63 V	28 mA	1	Surface Mount	Diesale	2.8 V	100 °C	-40 °C
Texas Instruments ONET8551TYS4	Transimpedance	9 GHz	Die	3.63 V	28 mA	1	Surface Mount	Wafer	2.8 V	100 °C	-40 °C
Texas Instruments ONET8551TYS9	Transimpedance	9 GHz	Die	3.63 V	28 mA	1	Surface Mount	Wafer	2.8 V	100 °C	-40 °C

Catalog

11.3-Gbps limiting transimpedance amplifier with RSSI

Key Features

• 9-GHz Bandwidth10-kΩ Differential Small SignalTransimpedance–20-dBm Sensitivity0.9-µARMSInput Referred Noise2.5-mAp-pInput Overload CurrentReceived Signal Strength Indication(RSSI)92-mW Typical Power DissipationCML Data Outputs With On-Chip50-Ω Back-TerminationOn Chip Supply Filter CapacitorSingle +3.3-V SupplyDie Size: 870 µm x 1036 µm9-GHz Bandwidth10-kΩ Differential Small SignalTransimpedance–20-dBm Sensitivity0.9-µARMSInput Referred Noise2.5-mAp-pInput Overload CurrentReceived Signal Strength Indication(RSSI)92-mW Typical Power DissipationCML Data Outputs With On-Chip50-Ω Back-TerminationOn Chip Supply Filter CapacitorSingle +3.3-V SupplyDie Size: 870 µm x 1036 µm

Description

The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI. The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can. The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature. The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI. The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can. The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.