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Trans MOSFET N-CH 200V 0.25A 3-Pin TO-92 T/R
Discrete Semiconductor Products

TN0620N3-G-P014

Active
Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 200V, 6.0 OHM

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Trans MOSFET N-CH 200V 0.25A 3-Pin TO-92 T/R
Discrete Semiconductor Products

TN0620N3-G-P014

Active
Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 200V, 6.0 OHM

Technical Specifications

Parameters and characteristics for this part

SpecificationTN0620N3-G-P014
Current - Continuous Drain (Id) @ 25°C250 mA
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds150 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-226-3, TO-92-3
Power Dissipation (Max)1 W
Rds On (Max) @ Id, Vgs6 Ohm
Supplier Device PackageTO-92-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Box (TB) 2000$ 1.32
Microchip DirectAMMO 1$ 1.73
25$ 1.45
100$ 1.32
1000$ 1.11
5000$ 1.01
10000$ 0.95

Description

General part information

TN0620 Series

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.